Edge-state transport in gapped bilayer graphene
Related Experiment Video
Updated: Nov 5, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Jesús Arturo Arturo Sánchez Sánchez1, Thomas Stegmann2
1Universidad Nacional Autónoma de México, Avenida Universidad S/N, Chamilpa, 62210 Cuernavaca, Mor., Cuernavaca, Morelos, 62210, Mexico.
Abstract:
We investigate the electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -- typically a combination of zigzag, armchair, and bearded types -- we observe edge state conduction within the band gap, which is opened by a gate potential bias between the two layers. The edge states can generate a non-local resistance. Band structure calculations of gBLG nanoribbons corroborate the existence of the edge states, whose edge localization can be switched by tuning the electron energy. However, their existence strongly depends on the edge termination and does not originate from a topological bulk-boundary .
Related Concept Videos
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
The Electrical Double Layer
P-N junction
Electrostatic Boundary Conditions
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
Debye–Huckel–Onsager Conductance Equation

