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Preparation of Samples for Electron Microscopy

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Selected area polishing for precision TEM sample preparation

J B Liu¹, B M Tracy, R Gronsky

¹Materials Technology Department, Intel Corporation, Santa Clara, California 95052.

Microscopy Research and Technique

|October 1, 1993

Summary

This summary is machine-generated.

A new mechanical polishing method enhances cross-sectional transmission electron microscopy (TEM) sample preparation. This technique precisely isolates specific transistors for detailed failure analysis, reducing preparation time.

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Area of Science:

Materials Science
Semiconductor Device Analysis
Electron Microscopy

Background:

Transmission Electron Microscopy (TEM) is crucial for analyzing semiconductor devices.
Precise sample preparation is essential for high-resolution TEM imaging.
Existing methods can be time-consuming and lack precision for specific device analysis.

Purpose of the Study:

To develop an improved mechanical polishing technique for cross-sectional TEM sample preparation.
To enhance the precision of isolating specific transistors within a larger device array.
To reduce the overall time required for TEM sample preparation.

Main Methods:

A selected area mechanical polishing technique was employed.
Precise control over the plane of polish was utilized.
Samples were prepared from a pre-selected section of a 1-micron wide band of transistors.

Main Results:

Achieved high precision in cross-sectional TEM sample preparation.
Successfully obtained uniformly thin, electron-transparent TEM samples of specific, failed transistors.
Demonstrated the technique's effectiveness on a 4 mm by 10 mm device array.

Conclusions:

The developed polishing technique significantly improves TEM sample preparation for semiconductor failure analysis.
This method allows for the precise examination of individual failed transistors.
The technique offers a more efficient approach to preparing samples for detailed microstructural investigation.