Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

A Silicon Single-Electron Transistor Memory Operating at Room Temperature

Guo1, Leobandung, Chou

  • 1Nanostructure Laboratory, Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455, USA.

Science (New York, N.Y.)
|January 31, 1997
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gut dysbiosis during early life: causes, health outcomes, and amelioration via dietary intervention.

Critical reviews in food science and nutrition·2021
Same author

The pharmacology of chia chu tao, a Chinese oleander.

Medical abstracts·2010
Same author

About the traumatic aneurysm dissecans of the aorta.

Acta radiologica·2010
Same author

[p53 gene mutations in mouse skin tumors induced by DMBA-TPA-MNNG].

Zhonghua bing li xue za zhi = Chinese journal of pathology·2001
Same author

Near-Infrared Spectrum of the A(2)Pi(i)-X(2)Sigma(+) (2,0) Band of CN Studied by Concentration Modulation Laser Spectroscopy.

Journal of molecular spectroscopy·2001
Same author

Wavenumber Measurements of CO(2) Transitions in 1.5-µm Atmospheric Window Using an External-Cavity Diode Laser.

Journal of molecular spectroscopy·2001
Same journal

Erratum for the Research Article "Detecting supramolecular organic nanoparticles during heat wave".

Science (New York, N.Y.)·2026
Same journal

Local signals, systemic decline.

Science (New York, N.Y.)·2026
Same journal

The mechanics of liver regeneration.

Science (New York, N.Y.)·2026
Same journal

Computing in a memory with physics.

Science (New York, N.Y.)·2026
Same journal

Retraction.

Science (New York, N.Y.)·2026
Same journal

Making time.

Science (New York, N.Y.)·2026
See all related articles

Researchers demonstrated room-temperature single-electron memory using a silicon transistor. This novel device stores data using just one electron, paving the way for future ultra-dense integrated circuits.

Area of Science:

  • Semiconductor Physics
  • Nanotechnology
  • Electronic Devices

Background:

  • Traditional memory technologies face scaling limitations.
  • The development of single-electron devices offers a path toward higher data density.
  • Controlling individual electrons is crucial for next-generation electronics.

Purpose of the Study:

  • To demonstrate a functional single-electron memory device operating at room temperature.
  • To investigate the characteristics of electron confinement in nanoscale silicon structures.
  • To assess the potential for integrating this technology into large-scale circuits.

Main Methods:

  • Fabrication of a floating gate metal-oxide-semiconductor transistor with nanoscale dimensions.
  • Utilizing a silicon channel with a width smaller than the Debye screening length.

Related Experiment Videos

  • Employing a nanoscale polysilicon dot as the floating gate.

    • Main Results:

    • Successful demonstration of single-electron storage and memory operation at room temperature.
    • Observation of a discrete threshold voltage shift caused by a single stored electron.
    • Characterization of a staircase voltage-charge relationship and a self-limiting charging process.

    Conclusions:

    • A room-temperature single-electron memory is achievable using nanoscale silicon transistors.
    • The device exhibits unique electrical characteristics due to single-electron confinement.
    • The demonstrated structure and fabrication methods are compatible with ultralarge-scale integration.