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Evaluation of high density DRAMs as a nuclear radiation detector
1Department of Nuclear Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Summary
This study investigates nuclear radiation effects on dynamic random access memory (DRAM) devices. Alpha particle exposure revealed a linear soft error response, with sensitivity influenced by operating voltage and data patterns.
Area of Science:
- Nuclear physics and radiation effects
- Semiconductor device reliability
- Computer engineering and memory technology
Background:
- Dynamic Random Access Memory (DRAM) devices are susceptible to soft errors.
- Nuclear radiation can induce these soft errors, impacting device functionality.
- Understanding these effects is crucial for reliable electronic systems in radiation environments.
Purpose of the Study:
- To investigate the soft error phenomenon in DRAMs induced by nuclear radiation.
- To quantify the response of DRAMs to alpha particle exposure.
- To analyze the impact of operating parameters and total dose effects from gamma rays.
Main Methods:
- Exposure of decapped 256 kbit and 1 Mbit DRAM samples to standard alpha sources.
- Sensitivity studies varying DRAM operating voltage, refresh frequency, and stored data patterns.
- Exposure to gamma rays up to 10(5) rad to assess total dose effects and annealing.
Main Results:
- A linear response of DRAMs to alpha particle exposure was observed.
- Intrinsic detection efficiency for soft errors approached 10%.
- DRAM sensitivity to soft errors was found to be dependent on operating voltage, refresh frequency, and data patterns.
Conclusions:
- Nuclear radiation, specifically alpha particles, induces a predictable soft error phenomenon in DRAMs.
- Operating conditions significantly influence DRAM susceptibility to radiation-induced soft errors.
- Gamma ray exposure shows total dose effects and subsequent annealing, providing insights into long-term reliability.