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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Optical properties of strained InP quantum dots in Ga0.5In0.5P studied by space-charge techniques

Pettersson, Anand, Grimmeiss

    Physical Review. B, Condensed Matter
    |April 15, 1996
    PubMed
    Abstract

    No abstract available in PubMed .

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