Related Experiment Videos
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)
Abstract
No abstract available in PubMed .
Related Concept Videos
Articles linked to this work by shared authors, journal, and citation graph.
New mechanism for dislocation blocking in strained layer epitaxial growth
Physical review letters·2000
Instability-driven SiGe island growth
Physical review letters·2000
Thermal roughening of a thin film: A new type of roughening transition
Physical review letters·2000
Transition States Between Pyramids and Domes During Ge/Si Island Growth.
Science (New York, N.Y.)·1999
Normal-mode and free-Air gravity constraints on lateral variations in velocity and density of Earth's mantle
Science (New York, N.Y.)·1999
Ostwald Ripening of Self-Assembled Germanium Islands on Silicon(100).
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada·1998
Enhanced Permittivity in Wurtzite ScAlN Through Nanoscale Sc Clustering.
Advanced materials (Deerfield Beach, Fla.)·2026
A comprehensive insight of physical attributes of novel perovskite X2CdOsO6 (X = Cs, Na, K, Rb) oxides for photovoltaic applications.
Journal of molecular graphics & modelling·2026