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Łucja Marona

Showing results (1-10 of 8) with videos related to

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Scientific Reports|January 23, 2025
InGaN multiquantum wells-problem of carrier injectionAgata Bojarska-Cieślińska, Łucja Marona, Szymon Grzanka, et al.
Micromachines|February 27, 2026
InGaN Laser Diode with Spin-on-Glass Isolation Fabricated by Planarization and Etch-Back ProcessKatarzyna Piotrowska-Wolińska, Szymon Grzanka, Łucja Marona, et al.
Materials (Basel, Switzerland)|October 14, 2023
Palladium-Based Contacts on p-GaN and Their Application in Laser DiodesIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Micromachines|February 25, 2023
InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit ApplicationsKrzysztof Gibasiewicz, Anna Kafar, Dario Schiavon, et al.
Materials (Basel, Switzerland)|September 28, 2024
Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range OperationMuhammed Aktas, Szymon Grzanka, Łucja Marona, et al.
Scientific Reports|January 9, 2021
Role of dislocations in nitride laser diodes with different indium contentAgata Bojarska-Cieślińska, Łucja Marona, Julita Smalc-Koziorowska, et al.
Materials (Basel, Switzerland)|September 28, 2024
Pros and Cons of (NH<sub>4</sub>)<sub>2</sub>S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser DiodeIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Optics Express|July 19, 2020
Tuning of reflection spectrum of a monolithic high-contrast grating by variation of its spatial dimensionsMagdalena Marciniak, Artur Broda, Marcin Gębski, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Scientific Reports|January 23, 2025
InGaN multiquantum wells-problem of carrier injectionAgata Bojarska-Cieślińska, Łucja Marona, Szymon Grzanka, et al.
Micromachines|February 27, 2026
InGaN Laser Diode with Spin-on-Glass Isolation Fabricated by Planarization and Etch-Back ProcessKatarzyna Piotrowska-Wolińska, Szymon Grzanka, Łucja Marona, et al.
Materials (Basel, Switzerland)|October 14, 2023
Palladium-Based Contacts on p-GaN and Their Application in Laser DiodesIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Micromachines|February 25, 2023
InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit ApplicationsKrzysztof Gibasiewicz, Anna Kafar, Dario Schiavon, et al.
Materials (Basel, Switzerland)|September 28, 2024
Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range OperationMuhammed Aktas, Szymon Grzanka, Łucja Marona, et al.
Scientific Reports|January 9, 2021
Role of dislocations in nitride laser diodes with different indium contentAgata Bojarska-Cieślińska, Łucja Marona, Julita Smalc-Koziorowska, et al.
Materials (Basel, Switzerland)|September 28, 2024
Pros and Cons of (NH<sub>4</sub>)<sub>2</sub>S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser DiodeIryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Optics Express|July 19, 2020
Tuning of reflection spectrum of a monolithic high-contrast grating by variation of its spatial dimensionsMagdalena Marciniak, Artur Broda, Marcin Gębski, et al.
Pageof 1