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The Journal of Chemical Physics|May 20, 2025
Heterostructure engineering for wurtzite LaNA J E Rowberg, S Mu, C G Van de WalleJournal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Computational studies of conductivity in wide-band-gap semiconductors and oxidesC G Van de WalleJournal of Physics. Condensed Matter : an Institute of Physics Journal|July 11, 2014
First-principles study of van der Waals interactions in MoS2 and MoO3H Peelaers, C G Van de WalleJournal of Physics. Condensed Matter : an Institute of Physics Journal|January 22, 2016
Surprising stability of neutral interstitial hydrogen in diamond and cubic BNJ L Lyons, C G Van de WallePhysical Review Letters|November 3, 2001
Entropy-driven stabilization of a novel configuration for acceptor-hydrogen complexes in GaNS Limpijumnong, J E Northrup, C G Van De WallePhysical Review Letters|March 21, 2008
Mutual passivation of electrically active and isovalent impurities in dilute nitridesA Janotti, P Reunchan, S Limpijumnong, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|August 5, 2011
Hydrogenated cation vacancies in semiconducting oxidesJ B Varley, H Peelaers, A Janotti, et al.Physical Review Letters|August 23, 2002
Effects of hydrogen on the electronic properties of dilute GaAsN alloysA Janotti, S B Zhang, Su-Huai Wei, et al.Physical Chemistry Chemical Physics : PCCP|April 21, 2017
Acceptor doping in the proton conductor SrZrO<sub>3</sub>Leigh Weston, A Janotti, X Y Cui, et al.Physical Review Letters|December 11, 2012
Polarization-driven topological insulator transition in a GaN/InN/GaN quantum wellM S Miao, Q Yan, C G Van de Walle, et al.Pageof 9