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Nanotechnology|March 17, 2023
Extremely high frequency Schottky diodes based on single GaN nanowiresK Yu Shugurov, A M Mozharov, V V Fedorov, et al.
Nanotechnology|June 25, 2019
Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on SiA D Bolshakov, V V Fedorov, K Yu Shugurov, et al.
Nanotechnology|February 18, 2020
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerfaceK Yu Shugurov, A M Mozharov, A D Bolshakov, et al.
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