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Abstreiter

Showing results (61-70 of 119) with videos related to

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Physical Review Letters|March 5, 2004
Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron systemJ H Smet, R A Deutschmann, F Ertl, et al.
Nanotechnology|May 1, 2010
An atomically resolved study of InGaAs quantum dot layers grown with an indium flush stepJ G Keizer, E C Clark, M Bichler, et al.
Nature|January 18, 2002
Gate-voltage control of spin interactions between electrons and nuclei in a semiconductorJ H Smet, R A Deutschmann, F Ertl, et al.
Nanotechnology|August 13, 2010
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxyG Koblmüller, S Hertenberger, K Vizbaras, et al.
Nanotechnology|August 31, 2019
Optical absorption of composition-tunable InGaAs nanowire arraysJ Treu, X Xu, K Ott, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 28, 2008
Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowiresAnna Fontcuberta i Morral, Dance Spirkoska, Jordi Arbiol, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 25, 2009
Planar nanogap electrodes by direct nanotransfer printingSebastian Strobel, Stefan Harrer, Guillermo Penso Blanco, et al.
Nano Letters|April 9, 2010
Quantum interference control of femtosecond, microA current bursts in single GaAs nanowiresC Ruppert, S Thunich, G Abstreiter, et al.
Nanotechnology|May 19, 2012
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stabilityS Hertenberger, D Rudolph, J Becker, et al.
Nature|November 5, 2004
Optically programmable electron spin memory using semiconductor quantum dotsMiro Kroutvar, Yann Ducommun, Dominik Heiss, et al.
Pageof 12

Showing results (61-70 of 119) with videos related to

Sort By:
Pageof 12
Physical Review Letters|March 5, 2004
Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron systemJ H Smet, R A Deutschmann, F Ertl, et al.
Nanotechnology|May 1, 2010
An atomically resolved study of InGaAs quantum dot layers grown with an indium flush stepJ G Keizer, E C Clark, M Bichler, et al.
Nature|January 18, 2002
Gate-voltage control of spin interactions between electrons and nuclei in a semiconductorJ H Smet, R A Deutschmann, F Ertl, et al.
Nanotechnology|August 13, 2010
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxyG Koblmüller, S Hertenberger, K Vizbaras, et al.
Nanotechnology|August 31, 2019
Optical absorption of composition-tunable InGaAs nanowire arraysJ Treu, X Xu, K Ott, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 28, 2008
Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowiresAnna Fontcuberta i Morral, Dance Spirkoska, Jordi Arbiol, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 25, 2009
Planar nanogap electrodes by direct nanotransfer printingSebastian Strobel, Stefan Harrer, Guillermo Penso Blanco, et al.
Nano Letters|April 9, 2010
Quantum interference control of femtosecond, microA current bursts in single GaAs nanowiresC Ruppert, S Thunich, G Abstreiter, et al.
Nanotechnology|May 19, 2012
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stabilityS Hertenberger, D Rudolph, J Becker, et al.
Nature|November 5, 2004
Optically programmable electron spin memory using semiconductor quantum dotsMiro Kroutvar, Yann Ducommun, Dominik Heiss, et al.
Pageof 12