Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Adam T Neal

Showing results (1-10 of 8) with videos related to

Pageof 1
Sort By:
ACS Nano|September 11, 2012
Channel length scaling of MoS2 MOSFETsHan Liu, Adam T Neal, Peide D Ye
ACS Nano|July 30, 2013
Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factorAdam T Neal, Han Liu, Jiangjiang Gu, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 18, 2016
Transport studies in 2D transition metal dichalcogenides and black phosphorusYuchen Du, Adam T Neal, Hong Zhou, et al.
ACS Nano|August 19, 2014
Two-dimensional TaSe2 metallic crystals: spin-orbit scattering length and breakdown current densityAdam T Neal, Yuchen Du, Han Liu, et al.
ACS Nano|March 25, 2014
Phosphorene: an unexplored 2D semiconductor with a high hole mobilityHan Liu, Adam T Neal, Zhen Zhu, et al.
Scientific Reports|October 18, 2017
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga<sub>2</sub>O<sub>3</sub> and its Effect on Power DevicesAdam T Neal, Shin Mou, Roberto Lopez, et al.
Nano Letters|May 18, 2013
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide filmsHan Liu, Mengwei Si, Sina Najmaei, et al.
ACS Nano|December 20, 2013
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriersHan Liu, Mengwei Si, Yexin Deng, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
ACS Nano|September 11, 2012
Channel length scaling of MoS2 MOSFETsHan Liu, Adam T Neal, Peide D Ye
ACS Nano|July 30, 2013
Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factorAdam T Neal, Han Liu, Jiangjiang Gu, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 18, 2016
Transport studies in 2D transition metal dichalcogenides and black phosphorusYuchen Du, Adam T Neal, Hong Zhou, et al.
ACS Nano|August 19, 2014
Two-dimensional TaSe2 metallic crystals: spin-orbit scattering length and breakdown current densityAdam T Neal, Yuchen Du, Han Liu, et al.
ACS Nano|March 25, 2014
Phosphorene: an unexplored 2D semiconductor with a high hole mobilityHan Liu, Adam T Neal, Zhen Zhu, et al.
Scientific Reports|October 18, 2017
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga<sub>2</sub>O<sub>3</sub> and its Effect on Power DevicesAdam T Neal, Shin Mou, Roberto Lopez, et al.
Nano Letters|May 18, 2013
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide filmsHan Liu, Mengwei Si, Sina Najmaei, et al.
ACS Nano|December 20, 2013
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriersHan Liu, Mengwei Si, Yexin Deng, et al.
Pageof 1