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Beilstein Journal of Nanotechnology|February 15, 2018
Combined scanning probe electronic and thermal characterization of an indium arsenide nanowireTino Wagner, Fabian Menges, Heike Riel, et al.Nanotechnology|May 11, 2012
A single active nanoelectromechanical tuning fork front-end radio-frequency receiverSebastian T Bartsch, A Rusu, Adrian M IonescuACS Nano|March 11, 2015
Wafer-level hysteresis-free resonant carbon nanotube transistorsJi Cao, Sebastian T Bartsch, Adrian M IonescuNano Letters|December 15, 2012
Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strainGiorgio Signorello, Siegfried Karg, Mikael T Björk, et al.Nano Letters|January 5, 2012
Silicon nanowire Esaki diodesHeinz Schmid, Cedric Bessire, Mikael T Björk, et al.Nature Nanotechnology|February 7, 2009
Donor deactivation in silicon nanostructuresMikael T Björk, Heinz Schmid, Joachim Knoch, et al.ACS Nano|May 16, 2012
Transport properties of a single-molecule diodeEmanuel Lörtscher, Bernd Gotsmann, Youngu Lee, et al.Nature Communications|March 4, 2016
Temperature mapping of operating nanoscale devices by scanning probe thermometryFabian Menges, Philipp Mensch, Heinz Schmid, et al.ACS Nano|December 14, 2011
Nanomechanical silicon resonators with intrinsic tunable gain and sub-nW power consumptionSebastian T Bartsch, Andrea Lovera, Daniel Grogg, et al.Nano Letters|December 23, 2008
Doping limits of grown in situ doped silicon nanowires using phosphineHeinz Schmid, Mikael T Björk, Joachim Knoch, et al.Pageof 7