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Journal of Nanoscience and Nanotechnology|May 12, 2015
Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclustersAh Hyun Park, Tae Su Oh, Tae Hoon Seo, et al.
Nanotechnology|May 28, 2016
Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodesAh Hyun Park, S Chandramohan, Tae Hoon Seo, et al.
Scientific Reports|July 9, 2016
The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodesTae Hoon Seo, Seula Lee, Kyung Hyun Min, et al.
Nanoscale|September 10, 2015
Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubesAh Hyun Park, Tae Hoon Seo, S Chandramohan, et al.
Optics Express|June 7, 2011
Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrateTae Su Oh, Hyun Jeong, Yong Seok Lee, et al.
Nanoscale|October 19, 2017
Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodesTae Hoon Seo, Gun Hee Lee, Ah Hyun Park, et al.
Scientific Reports|January 20, 2015
Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodesTae Hoon Seo, Ah Hyun Park, Sungchan Park, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility TransistorsGun Hee Lee, Ah Hyun Park, Jin Hong Lim, et al.
Optics Express|July 1, 2014
Enhanced optical output power by the silver localized surface plasmon coupling through side facets of micro-hole patterned InGaN/GaN light-emitting diodesKang Jea Lee, Seung Hwan Kim, Ah Hyun Park, et al.
Optics Express|November 24, 2011
Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrodeTae Hoon Seo, Kang Jea Lee, Ah Hyun Park, et al.
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