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Ahmedullah Aziz

Showing results (1-10 of 7) with videos related to

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Scientific Reports|April 13, 2021
A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effectShamiul Alam, Md Shafayat Hossain, Ahmedullah Aziz
Scientific Reports|January 28, 2025
In-pixel foreground and contrast enhancement circuits with customizable mappingMd Rahatul Islam Udoy, Md Mazharul Islam, Elijah Johnson, et al.
Chempluschem|December 13, 2025
Recent Advances in Inorganic Oxide-Based Resistive Random Access Memory: Challenges and Strategies for Practical ApplicationsAnurag Pritam, Anwesha Mahapatra, Ritu Gupta, et al.
Scientific Reports|February 10, 2022
A three-terminal non-volatile ferroelectric switch with an insulator-metal transition channelJaykumar Vaidya, R S Surya Kanthi, Shamiul Alam, et al.
Scientific Reports|March 17, 2024
Machine learning-powered compact modeling of stochastic electronic devices using mixture density networksJack Hutchins, Shamiul Alam, Dana S Rampini, et al.
Nature Communications|August 8, 2015
A steep-slope transistor based on abrupt electronic phase transitionNikhil Shukla, Arun V Thathachary, Ashish Agrawal, et al.
Scientific Reports|January 27, 2023
CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arraysAntik Mallick, Zijian Zhao, Mohammad Khairul Bashar, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Scientific Reports|April 13, 2021
A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effectShamiul Alam, Md Shafayat Hossain, Ahmedullah Aziz
Scientific Reports|January 28, 2025
In-pixel foreground and contrast enhancement circuits with customizable mappingMd Rahatul Islam Udoy, Md Mazharul Islam, Elijah Johnson, et al.
Chempluschem|December 13, 2025
Recent Advances in Inorganic Oxide-Based Resistive Random Access Memory: Challenges and Strategies for Practical ApplicationsAnurag Pritam, Anwesha Mahapatra, Ritu Gupta, et al.
Scientific Reports|February 10, 2022
A three-terminal non-volatile ferroelectric switch with an insulator-metal transition channelJaykumar Vaidya, R S Surya Kanthi, Shamiul Alam, et al.
Scientific Reports|March 17, 2024
Machine learning-powered compact modeling of stochastic electronic devices using mixture density networksJack Hutchins, Shamiul Alam, Dana S Rampini, et al.
Nature Communications|August 8, 2015
A steep-slope transistor based on abrupt electronic phase transitionNikhil Shukla, Arun V Thathachary, Ashish Agrawal, et al.
Scientific Reports|January 27, 2023
CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arraysAntik Mallick, Zijian Zhao, Mohammad Khairul Bashar, et al.
Pageof 1