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Nature Communications|July 2, 2025
High-performance p-type bilayer WSe2 field effect transistors by nitric oxide dopingSubir Ghosh, Muhtasim Ul Karim Sadaf, Andrew R Graves, et al.Science Advances|May 30, 2019
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transportFu Zhang, Yanfu Lu, Daniel S Schulman, et al.Scientific Reports|June 22, 2016
A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D MaterialsSaptarshi Das, Mrinal K Bera, Sheng Tong, et al.Journal of the American Chemical Society|June 1, 2026
Nonprecious Core-Shell Catalysts for Durable High-Performance Water ElectrolysisQihao Li, Meixue Hu, Saptarshi Das, et al.ACS Nano|January 15, 2021
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on SapphireMikhail Chubarov, Tanushree H Choudhury, Danielle Reifsnyder Hickey, et al.Nano Letters|February 17, 2018
Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2Mathew J Cherukara, Daniel S Schulmann, Kiran Sasikumar, et al.Nature Communications|October 29, 2025
Large-scale crossbar arrays based on three-terminal MoS2 memtransistorsThomas F Schranghamer, Andrew Pannone, Jishnu M Kumar, et al.Nature Communications|December 5, 2024
A stochastic encoder using point defects in two-dimensional materialsHarikrishnan Ravichandran, Theresia Knobloch, Shiva Subbulakshmi Radhakrishnan, et al.ACS Nano|July 25, 2023
Observation of Rich Defect Dynamics in Monolayer MoS2Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, et al.Nature|January 10, 2024
Three-dimensional integration of two-dimensional field-effect transistorsDarsith Jayachandran, Rahul Pendurthi, Muhtasim Ul Karim Sadaf, et al.Pageof 14