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Imperfections in Crystal Structure: Point, Line and Plane Defects

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...

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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...

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Related Experiment Video

Updated: May 12, 2026

Using Microwave and Macroscopic Samples of Dielectric Solids to Study the Photonic Properties of Disordered Photonic Bandgap Materials

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Published on: September 26, 2014

A stochastic encoder using point defects in two-dimensional materials.

Harikrishnan Ravichandran¹, Theresia Knobloch², Shiva Subbulakshmi Radhakrishnan¹

¹Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA.

Nature Communications

|December 5, 2024

Summary

This summary is machine-generated.

Defects in 2D semiconductor transistors can enhance brain-inspired computing. Researchers used these defects to build a noise-resilient stochastic engine, improving image recognition accuracy.

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Last Updated: May 12, 2026

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Published on: September 26, 2014

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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Published on: May 10, 2021

Area of Science:

Materials Science
Quantum Computing
Neuromorphic Engineering

Background:

Electronic device defects are typically detrimental but offer potential in quantum and energy applications.
The use of defects for novel computational paradigms like neuromorphic computing is largely unexplored.

Purpose of the Study:

To leverage defects in scaled 2D semiconductor transistors for a stochastic inference engine.
To investigate the role of point defects in tungsten diselenide (WSe2) field-effect transistors (FETs) and their impact on random telegraph noise (RTN).

Main Methods:

Atomistic imaging
Density functional theory (DFT) calculations
Device modeling
Low-temperature transport experiments
Spiking neural network (SNN) implementation

Main Results:

Detailed characterization of point defects in WSe2 FETs and their influence on RTN.
Construction of a stochastic encoder using RTN.
Demonstrated enhanced inference accuracy on noisy medical-MNIST images compared to deterministic encoders.

Conclusions:

Intrinsic point defects in 2D materials can be effectively utilized as a resource for neuromorphic computing.
Stochastic inference engines based on RTN show promise for noise-resilient computation.