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Akihiro Ohtake

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Scientific Reports|January 21, 2018
Atomic structure and passivated nature of the Se-treated GaAs(111)B surfaceAkihiro Ohtake, Shunji Goto, Jun Nakamura
Scientific Reports|March 14, 2020
Strain relaxation in InAs heteroepitaxy on lattice-mismatched substratesAkihiro Ohtake, Takaaki Mano, Yoshiki Sakuma
ACS Omega|August 29, 2019
Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs InterlayersAkihiro Ohtake, Takaaki Mano, Kazutaka Mitsuishi, et al.
Nanomaterials (Basel, Switzerland)|February 13, 2021
Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet EpitaxyMarco Abbarchi, Takaaki Mano, Takashi Kuroda, et al.
Scientific Reports|October 24, 2023
Atomic structure of the Se-passivated GaAs(001) surface revisitedAkihiro Ohtake, Takayuki Suga, Shunji Goto, et al.
Physical Review Letters|November 22, 2002
New structure model for the GaAs(001)-c(4x4) surfaceAkihiro Ohtake, Jun Nakamura, Shiro Tsukamoto, et al.
Physical Review Letters|July 13, 2004
Kinetics in surface reconstructions on GaAs(001)Akihiro Ohtake, Pavel Kocán, Jun Nakamura, et al.
Physical Review Letters|February 9, 2005
Ga-rich limit of surface reconstructions on GaAs(001): atomic structure of the (4 x 6) phaseAkihiro Ohtake, Pavel Kocán, Kaori Seino, et al.
Chemical Communications (Cambridge, England)|June 20, 2015
Overcoming metal-induced fluorescence quenching on plasmo-photonic metasurfaces coated by a self-assembled monolayerBongseok Choi, Masanobu Iwanaga, Hideki T Miyazaki, et al.
Nature Communications|January 16, 2024
Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas systemYuto Uematsu, Takafumi Ishibe, Takaaki Mano, et al.
Pageof 2

Showing results (1-10 of 12) with videos related to

Sort By:
Pageof 2
Scientific Reports|January 21, 2018
Atomic structure and passivated nature of the Se-treated GaAs(111)B surfaceAkihiro Ohtake, Shunji Goto, Jun Nakamura
Scientific Reports|March 14, 2020
Strain relaxation in InAs heteroepitaxy on lattice-mismatched substratesAkihiro Ohtake, Takaaki Mano, Yoshiki Sakuma
ACS Omega|August 29, 2019
Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs InterlayersAkihiro Ohtake, Takaaki Mano, Kazutaka Mitsuishi, et al.
Nanomaterials (Basel, Switzerland)|February 13, 2021
Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet EpitaxyMarco Abbarchi, Takaaki Mano, Takashi Kuroda, et al.
Scientific Reports|October 24, 2023
Atomic structure of the Se-passivated GaAs(001) surface revisitedAkihiro Ohtake, Takayuki Suga, Shunji Goto, et al.
Physical Review Letters|November 22, 2002
New structure model for the GaAs(001)-c(4x4) surfaceAkihiro Ohtake, Jun Nakamura, Shiro Tsukamoto, et al.
Physical Review Letters|July 13, 2004
Kinetics in surface reconstructions on GaAs(001)Akihiro Ohtake, Pavel Kocán, Jun Nakamura, et al.
Physical Review Letters|February 9, 2005
Ga-rich limit of surface reconstructions on GaAs(001): atomic structure of the (4 x 6) phaseAkihiro Ohtake, Pavel Kocán, Kaori Seino, et al.
Chemical Communications (Cambridge, England)|June 20, 2015
Overcoming metal-induced fluorescence quenching on plasmo-photonic metasurfaces coated by a self-assembled monolayerBongseok Choi, Masanobu Iwanaga, Hideki T Miyazaki, et al.
Nature Communications|January 16, 2024
Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas systemYuto Uematsu, Takafumi Ishibe, Takaaki Mano, et al.
Pageof 2