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Nanotechnology|January 5, 2018
Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgalliumHyunseok Kim, Dingkun Ren, Alan C Farrell, et al.
Nanoscale|June 6, 2017
Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substratesDingkun Ren, Alan C Farrell, Benjamin S Williams, et al.
Nano Letters|February 23, 2016
Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical LinksHyunseok Kim, Alan C Farrell, Pradeep Senanayake, et al.
Nano Letters|August 1, 2017
Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-InsulatorHyunseok Kim, Wook-Jae Lee, Alan C Farrell, et al.
Nano Letters|March 24, 2017
Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array PhotodetectorsAlan C Farrell, Pradeep Senanayake, Xiao Meng, et al.
Nano Letters|December 20, 2015
High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of LightWook-Jae Lee, Pradeep Senanayake, Alan C Farrell, et al.
Nano Letters|October 1, 2015
High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor DepositionAlan C Farrell, Wook-Jae Lee, Pradeep Senanayake, et al.
Scientific Reports|December 3, 2015
Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodesAlan C Farrell, Pradeep Senanayake, Chung-Hong Hung, et al.
Nanoscale|April 18, 2018
Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient modelDingkun Ren, Adam C Scofield, Alan C Farrell, et al.
Nano Letters|November 17, 2018
Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n HeterojunctionsDingkun Ren, Xiao Meng, Zixuan Rong, et al.
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