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Journal of Nanoscience and Nanotechnology|May 15, 2015
On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devicesNomin Lim, Alexander Efremov, Geun Young Yeom, et al.
Materials (Basel, Switzerland)|April 3, 2021
Dry Etching Performance and Gas-Phase Parameters of C<sub>6</sub>F<sub>12</sub>O + Ar Plasma in Comparison with CF<sub>4</sub> + ArNomin Lim, Yeon Sik Choi, Alexander Efremov, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale PatternsJunmyung Lee, Alexander Efremov, Geun Young Yeom, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Silicon Surface Modification Using C4F8+O2 Plasma for Nano-Imprint LithographyJunmyung Lee, Alexander Efremov, Jaemin Lee, et al.
Journal of Nanoscience and Nanotechnology|May 15, 2015
Etching characteristics and mechanism of SiN(x) films for nano-devices in CH2F2/O2/Ar inductively coupled plasma: effect of O2 mixing ratioJinyoung Son, Alexander Efremov, Sun Jin Yun, et al.
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