Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns

An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0-50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film.