Effect of C2H2F4/CF4O with low global warming potentials on SiNx etching as a CHF3 replacement

Kyung Lim Kim1,2, Jong Woo Hong3, Young Woo Jeon4

  • 1Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Scientific Reports
|November 18, 2025
PubMed
Summary

New eco-friendly gases like C2H2F4 and CF4O significantly improve silicon nitride (SiNx) etching for semiconductor manufacturing. These alternatives offer higher etch rates and selectivity while reducing greenhouse gas emissions compared to traditional CHF3.

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