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An-Jye Tzou

Showing results (1-10 of 9) with videos related to

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Nanomaterials (Basel, Switzerland)|September 17, 2020
Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS<sub>2</sub> PhotodetectorYung-Yu Lai, Yen-Wei Yeh, An-Jye Tzou, et al.
Micromachines|July 2, 2021
The Evolution of Manufacturing Technology for GaN Electronic DevicesAn-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, et al.
Scientific Reports|March 4, 2017
Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithographySheng-Wen Wang, Kuo-Bin Hong, Yu-Lin Tsai, et al.
Nanoscale Research Letters|September 27, 2014
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrateChia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, et al.
Optics Express|July 14, 2016
High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layerAn-Jye Tzou, Da-Wei Lin, Chien-Rong Yu, et al.
Scientific Reports|January 23, 2016
Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositionsChih-Hsien Cheng, An-Jye Tzou, Jung-Hung Chang, et al.
Nanoscale Research Letters|April 30, 2017
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer DepositionAn-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, et al.
Micromachines|October 23, 2021
Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous IntegrationLung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, et al.
Nanomaterials (Basel, Switzerland)|April 7, 2017
Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer DepositionYu-Kuang Liao, Yung-Tsung Liu, Dan-Hua Hsieh, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Nanomaterials (Basel, Switzerland)|September 17, 2020
Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS<sub>2</sub> PhotodetectorYung-Yu Lai, Yen-Wei Yeh, An-Jye Tzou, et al.
Micromachines|July 2, 2021
The Evolution of Manufacturing Technology for GaN Electronic DevicesAn-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, et al.
Scientific Reports|March 4, 2017
Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithographySheng-Wen Wang, Kuo-Bin Hong, Yu-Lin Tsai, et al.
Nanoscale Research Letters|September 27, 2014
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrateChia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, et al.
Optics Express|July 14, 2016
High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layerAn-Jye Tzou, Da-Wei Lin, Chien-Rong Yu, et al.
Scientific Reports|January 23, 2016
Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositionsChih-Hsien Cheng, An-Jye Tzou, Jung-Hung Chang, et al.
Nanoscale Research Letters|April 30, 2017
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer DepositionAn-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, et al.
Micromachines|October 23, 2021
Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous IntegrationLung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, et al.
Nanomaterials (Basel, Switzerland)|April 7, 2017
Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer DepositionYu-Kuang Liao, Yung-Tsung Liu, Dan-Hua Hsieh, et al.
Pageof 1