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Nano Letters|December 8, 2023
Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality CavityTianhua Ren, Junyong Wang, Kaizhen Han, et al.
Nano Letters|June 9, 2021
Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire WidthYuye Kang, Shengqiang Xu, Kaizhen Han, et al.
Optics Express|December 17, 2017
Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)Annie Kumar, Shuh-Ying Lee, Sachin Yadav, et al.
Optics Express|April 7, 2017
Monolithic integration of InGaAs n-FETs and lasers on Ge substrateAnnie Kumar, Shuh-Ying Lee, Sachin Yadav, et al.
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