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Plos One|December 25, 2013
Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFETMohd F Mohd Razip Wee, Arash Dehzangi, Sylvain Bollaert, et al.International Journal of Molecular Sciences|May 19, 2012
Preparation, characterization and thermal degradation of polyimide (4-APS/BTDA)/SiO(2) composite filmsMansor Bin Ahmad, Yadollah Gharayebi, Mohd Sapuan Salit, et al.Plos One|April 19, 2014
Effect of geometric parameters on the performance of p-type junctionless lateral gate transistorsFarhad Larki, Arash Dehzangi, Sawal Hamid Md Ali, et al.Beilstein Journal of Nanotechnology|February 1, 2013
Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithographyFarhad Larki, Arash Dehzangi, Alam Abedini, et al.Nanoscale Research Letters|July 12, 2012
Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithographyArash Dehzangi, A Makarimi Abdullah, Farhad Larki, et al.Plos One|June 19, 2013
Impact of parameter variation in fabrication of nanostructure by atomic force microscopy nanolithographyArash Dehzangi, Farhad Larki, Sabar D Hutagalung, et al.Pageof 2