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Aryan Afzalian

Showing results (1-10 of 6) with videos related to

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Sensors (Basel, Switzerland)|July 8, 2023
Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule DetectionAryan Afzalian, Denis Flandre
Materials (Basel, Switzerland)|February 25, 2023
The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport StudyElaheh Akhoundi, Michel Houssa, Aryan Afzalian
ACS Nano|March 18, 2025
Impact of Interface and Surface Oxide Defects on WS<sub>2</sub> Electronic Properties from First PrinciplesBenoit Van Troeye, Fabian Ducry, Mauro Dossena, et al.
NPJ 2D Materials and Applications|April 29, 2026
Oxide induced degradation in MoS<sub>2</sub> field-effect transistorsFabian Ducry, Benoit Van Troeye, Mauro Dossena, et al.
Scientific Reports|November 9, 2017
Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integrationMartin Holland, Mark van Dal, Blandine Duriez, et al.
Nature Nanotechnology|February 23, 2010
Nanowire transistors without junctionsJean-Pierre Colinge, Chi-Woo Lee, Aryan Afzalian, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Sensors (Basel, Switzerland)|July 8, 2023
Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule DetectionAryan Afzalian, Denis Flandre
Materials (Basel, Switzerland)|February 25, 2023
The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport StudyElaheh Akhoundi, Michel Houssa, Aryan Afzalian
ACS Nano|March 18, 2025
Impact of Interface and Surface Oxide Defects on WS<sub>2</sub> Electronic Properties from First PrinciplesBenoit Van Troeye, Fabian Ducry, Mauro Dossena, et al.
NPJ 2D Materials and Applications|April 29, 2026
Oxide induced degradation in MoS<sub>2</sub> field-effect transistorsFabian Ducry, Benoit Van Troeye, Mauro Dossena, et al.
Scientific Reports|November 9, 2017
Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integrationMartin Holland, Mark van Dal, Blandine Duriez, et al.
Nature Nanotechnology|February 23, 2010
Nanowire transistors without junctionsJean-Pierre Colinge, Chi-Woo Lee, Aryan Afzalian, et al.
Pageof 1