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Physical Review Letters
|
April 28, 2009
Resistance noise in electrically biased bilayer graphene
Atindra Nath Pal, Arindam Ghosh
Physical Review Letters
|
December 11, 2012
Direct observation of valley hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations
Atindra Nath Pal, Vidya Kochat, Arindam Ghosh
ACS Nano
|
September 10, 2011
Nature of electronic states in atomically thin MoS₂ field-effect transistors
Subhamoy Ghatak, Atindra Nath Pal, Arindam Ghosh
ACS Applied Materials & Interfaces
|
November 2, 2022
Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor
Shubhadip Moulick, Rafiqul Alam, Atindra Nath Pal
Beilstein Journal of Nanotechnology
|
July 7, 2018
Electronic conduction during the formation stages of a single-molecule junction
Atindra Nath Pal, Tal Klein, Ayelet Vilan, et al.
ACS Applied Materials & Interfaces
|
July 26, 2022
High-Performance Broad-Band Photodetection Based on Graphene-MoS<sub>2</sub>Se<sub>2(1-</sub> Alloy Engineered Phototransistors
Shubhrasish Mukherjee, Didhiti Bhattacharya, Samit Kumar Ray, et al.
Nanoscale
|
October 17, 2023
Machine-learning prediction of the formation of atomic gold wires by mechanically controlled break junctions
Aishwaryo Ghosh, Biswajit Pabi, Atindra Nath Pal, et al.
Nanoscale
|
December 12, 2024
Charge noise in low Schottky barrier multilayer tellurium field-effect transistors
Shubhadip Moulick, Dipanjan Maity, Gaurab Samanta, et al.
Nano Letters
|
May 2, 2023
Structural Regulation of Mechanical Gating in Molecular Junctions
Biswajit Pabi, Jakub Šebesta, Richard Korytár, et al.
Physical Review Letters
|
July 26, 2014
Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity
Paritosh Karnatak, Srijit Goswami, Vidya Kochat, et al.
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of 2
Search research articles
Search
Showing results (1-10 of 17) with videos related to
Sort By:
Page
of 2
Physical Review Letters
|
April 28, 2009
Resistance noise in electrically biased bilayer graphene
Atindra Nath Pal, Arindam Ghosh
Physical Review Letters
|
December 11, 2012
Direct observation of valley hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations
Atindra Nath Pal, Vidya Kochat, Arindam Ghosh
ACS Nano
|
September 10, 2011
Nature of electronic states in atomically thin MoS₂ field-effect transistors
Subhamoy Ghatak, Atindra Nath Pal, Arindam Ghosh
ACS Applied Materials & Interfaces
|
November 2, 2022
Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor
Shubhadip Moulick, Rafiqul Alam, Atindra Nath Pal
Beilstein Journal of Nanotechnology
|
July 7, 2018
Electronic conduction during the formation stages of a single-molecule junction
Atindra Nath Pal, Tal Klein, Ayelet Vilan, et al.
ACS Applied Materials & Interfaces
|
July 26, 2022
High-Performance Broad-Band Photodetection Based on Graphene-MoS<sub>2</sub>Se<sub>2(1-</sub> Alloy Engineered Phototransistors
Shubhrasish Mukherjee, Didhiti Bhattacharya, Samit Kumar Ray, et al.
Nanoscale
|
October 17, 2023
Machine-learning prediction of the formation of atomic gold wires by mechanically controlled break junctions
Aishwaryo Ghosh, Biswajit Pabi, Atindra Nath Pal, et al.
Nanoscale
|
December 12, 2024
Charge noise in low Schottky barrier multilayer tellurium field-effect transistors
Shubhadip Moulick, Dipanjan Maity, Gaurab Samanta, et al.
Nano Letters
|
May 2, 2023
Structural Regulation of Mechanical Gating in Molecular Junctions
Biswajit Pabi, Jakub Šebesta, Richard Korytár, et al.
Physical Review Letters
|
July 26, 2014
Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity
Paritosh Karnatak, Srijit Goswami, Vidya Kochat, et al.
Page
of 2