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Nature Communications|October 17, 2022
Two-dimensional materials-based probabilistic synapses and reconfigurable neurons for measuring inference uncertainty using Bayesian neural networksAmritanand Sebastian, Rahul Pendurthi, Azimkhan Kozhakhmetov, et al.
ACS Applied Materials & Interfaces|March 11, 2021
Interface Transparency and Rashba Spin Torque Enhancement in WSe2 HeterostructuresSteve Novakov, Bhakti Jariwala, Nguyen M Vu, et al.
ACS Applied Materials & Interfaces|August 19, 2020
Single- versus Dual-Ion Conductors for Electric Double Layer Gating: Finite Element Modeling and Hall-Effect MeasurementsAaron Woeppel, Ke Xu, Azimkhan Kozhakhmetov, et al.
Small (Weinheim an Der Bergstrasse, Germany)|July 17, 2022
Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOSRahul Pendurthi, Darsith Jayachandran, Azimkhan Kozhakhmetov, et al.
ACS Nano|November 17, 2023
Spin-Stabilization by Coulomb Blockade in a Vanadium Dimer in WSe2Samuel Stolz, Bowen Hou, Dan Wang, et al.
ACS Applied Materials & Interfaces|June 2, 2026
Reducing Plasma-Induced Damage in 2D Transition Metal Dichalcogenide Heterostructures through Optimized Plasma-Enhanced Atomic Layer DepositionRebecca A Dawley, Anil Adhikari, Khondker Shihabul Hoque, et al.
ACS Applied Materials & Interfaces|November 8, 2021
Substrate Modification during Chemical Vapor Deposition of hBN on SapphireAnushka Bansal, Maria Hilse, Benjamin Huet, et al.
Nature Communications|December 16, 2021
Spin-dependent vibronic response of a carbon radical ion in two-dimensional WS2Katherine A Cochrane, Jun-Ho Lee, Christoph Kastl, et al.
Nano Letters|May 2, 2025
Threshold Voltage Control through Solvent Doping of Monolayer MoS2 TransistorsKathryn Neilson, Charles Mokhtarzadeh, Marc Jaikissoon, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 10, 2020
Scalable Substitutional Re-Doping and its Impact on the Optical and Electronic Properties of Tungsten DiselenideAzimkhan Kozhakhmetov, Bruno Schuler, Anne Marie Z Tan, et al.
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