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Optics Express|February 8, 2013
A high efficiency dual-junction solar cell implemented as a nanowire arrayShuqing Yu, Bernd WitzigmannOptics Express|January 22, 2015
Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDsFriedhard Römer, Bernd WitzigmannOptics Express|January 4, 2011
Light absorption and emission in nanowire array solar cellsJan Kupec, Ralph L Stoop, Bernd WitzigmannSensors (Basel, Switzerland)|October 20, 2020
Micromagnetic Simulations of Submicron Vortex Structures for the Detection of Superparamagnetic LabelsLukas Wetterau, Claas Abert, Dieter Suess, et al.Materials (Basel, Switzerland)|December 24, 2021
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting DiodesFriedhard Römer, Martin Guttmann, Tim Wernicke, et al.Optics Express|April 4, 2015
CMOS-compatible optical switching concept based on strain-induced refractive-index tuningMichele Virgilio, Bernd Witzigmann, Gabriele Bolognini, et al.Nano Letters|November 14, 2019
High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical GatingMohammad Karimi, Xulu Zeng, Bernd Witzigmann, et al.Nanoscale|April 22, 2021
Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discsHossein Jeddi, Mohammad Karimi, Bernd Witzigmann, et al.Nanotechnology|February 21, 2024
Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contactsHossein Jeddi, Kristi Adham, Yue Zhao, et al.Nanotechnology|January 10, 2017
GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistorsFeng Yu, Shengbo Yao, Friedhard Römer, et al.Pageof 2