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Bhaswar Chakrabarti

Showing results (1-10 of 5) with videos related to

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Advanced Materials (Deerfield Beach, Fla.)|December 29, 2022
Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design PerspectiveWilfried Haensch, Anand Raghunathan, Kaushik Roy, et al.
Nanoscale|January 18, 2023
Insulator-to-metal phase transition in a few-layered MoSe<sub>2</sub> field effect transistorNihar R Pradhan, Carlos Garcia, Bhaswar Chakrabarti, et al.
ACS Applied Electronic Materials|March 6, 2023
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit OperationMasud Rana Sk, Sunanda Thunder, David Lehninger, et al.
Nanoscale|April 18, 2018
Silicon compatible Sn-based resistive switching memorySushant Sonde, Bhaswar Chakrabarti, Yuzi Liu, et al.
ACS Nano|March 1, 2021
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration SynthesisBhaswar Chakrabarti, Henry Chan, Khan Alam, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Advanced Materials (Deerfield Beach, Fla.)|December 29, 2022
Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design PerspectiveWilfried Haensch, Anand Raghunathan, Kaushik Roy, et al.
Nanoscale|January 18, 2023
Insulator-to-metal phase transition in a few-layered MoSe<sub>2</sub> field effect transistorNihar R Pradhan, Carlos Garcia, Bhaswar Chakrabarti, et al.
ACS Applied Electronic Materials|March 6, 2023
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit OperationMasud Rana Sk, Sunanda Thunder, David Lehninger, et al.
Nanoscale|April 18, 2018
Silicon compatible Sn-based resistive switching memorySushant Sonde, Bhaswar Chakrabarti, Yuzi Liu, et al.
ACS Nano|March 1, 2021
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration SynthesisBhaswar Chakrabarti, Henry Chan, Khan Alam, et al.
Pageof 1