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Journal of Nanoscience and Nanotechnology|November 25, 2018

The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Insulated-Gate Bipolar Transistor Power SemiconductorMyeong-Choel Shin, Hyun-Ah Kim, Byung-Sub Ahn, et al.

Journal of Nanoscience and Nanotechnology|November 25, 2018

Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process ParametersMyeong Cheol Shin, Hun-Suk Chung, Byung-Sub Ahn, et al.

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Journal of Nanoscience and Nanotechnology|November 25, 2018

The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Insulated-Gate Bipolar Transistor Power SemiconductorMyeong-Choel Shin, Hyun-Ah Kim, Byung-Sub Ahn, et al.

Journal of Nanoscience and Nanotechnology|November 25, 2018

Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process ParametersMyeong Cheol Shin, Hun-Suk Chung, Byung-Sub Ahn, et al.

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