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Byungcheul Kim

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Journal of Nanoscience and Nanotechnology|July 18, 2013
A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devicesHo-Myoung An, Hee-Dong Kim, Byungcheul Kim, et al.
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Showing results (1-10 of 1) with videos related to

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Pageof 1
Journal of Nanoscience and Nanotechnology|July 18, 2013
A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devicesHo-Myoung An, Hee-Dong Kim, Byungcheul Kim, et al.
Pageof 1