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Nanotechnology|September 3, 2014
Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studiesJ G Gluschke, S Fahlvik Svensson, C Thelander, et al.Nanotechnology|August 1, 2013
Control and understanding of kink formation in InAs-InP heterostructure nanowiresS Fahlvik Svensson, S Jeppesen, C Thelander, et al.Human Genetics|May 1, 1992
Genetic and blood coagulation characterization of "Swedish" families with von Willebrand's disease types I and III: new aspects of heredityM Anvret, M Blombäck, M Lindstedt, et al.Nanotechnology|February 17, 2010
Time-resolved photoluminescence investigations on HfO2-capped InP nanowiresS Münch, S Reitzenstein, M Borgström, et al.Nature Communications|December 18, 2019
Electrical control of spins and giant g-factors in ring-like coupled quantum dotsH Potts, I-J Chen, A Tsintzis, et al.Nanotechnology|April 24, 2010
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursorsC Thelander, K A Dick, M T Borgström, et al.Nanotechnology|November 1, 2014
Formation of nanogaps in InAs nanowires by selectively etching embedded InP segmentsM I Schukfeh, K Storm, A Hansen, et al.Nanoscale|April 3, 2020
Ambipolar transport in narrow bandgap semiconductor InSb nanowiresB Dalelkhan, D J O Göransson, C Thelander, et al.Scientific Reports|January 19, 2019
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETsT Vasen, P Ramvall, A Afzalian, et al.Scientific Reports|October 8, 2017
Imaging Atomic Scale Dynamics on III-V Nanowire Surfaces During Electrical OperationJ L Webb, J Knutsson, M Hjort, et al.Pageof 2