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Nano Letters|December 20, 2017
Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength InfraredMohammad Karimi, Magnus Heurlin, Steven Limpert, et al.
Small (Weinheim an Der Bergstrasse, Germany)|June 25, 2020
Dislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device ApplicationsMaryam Khalilian, Zhaoxia Bi, Jonas Johansson, et al.
ACS Nano|March 7, 2017
X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell NanowireDmitry Dzhigaev, Tomaš Stankevič, Zhaoxia Bi, et al.
Communications Materials|August 19, 2024
Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructuresLeonardo Massai, Bence Hetényi, Matthias Mergenthaler, et al.
Nano Letters|December 17, 2013
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistorsDamon J Carrad, Adam M Burke, Roman W Lyttleton, et al.
Physical Review Letters|November 24, 2023
Phase-Driving Hole Spin QubitsStefano Bosco, Simon Geyer, Leon C Camenzind, et al.
Nano Letters|May 24, 2017
Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared PhotodetectorsMohammad Karimi, Vishal Jain, Magnus Heurlin, et al.
Nano Letters|August 19, 2011
A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditionsChristian Borschel, Maria E Messing, Magnus T Borgström, et al.
Nano Letters|October 8, 2013
Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ionsSandeep Kumar, Waldomiro Paschoal, Andreas Johannes, et al.
Nature Communications|February 4, 2014
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinningDmitry B Suyatin, Vishal Jain, Valery A Nebol'sin, et al.
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