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Changhwan Shin

Showing results (11-20 of 43) with videos related to

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Nano Convergence|February 6, 2018
Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistorsEunah Ko, Jaemin Shin, Changhwan Shin
Micromachines|September 23, 2022
Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAMMinjae Sun, Hyoung Won Baac, Changhwan Shin
Micromachines|May 28, 2020
Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Superlattice on Transparent ITO/Glass SubstrateYejoo Choi, Jaemin Shin, Seungjun Moon, et al.
Micromachines|September 23, 2022
Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm TechnologyChangwoo Noh, Changwoo Han, Sang Min Won, et al.
Scientific Reports|October 6, 2022
Improved remnant polarization of Zr-doped HfO<sub>2</sub> ferroelectric film by CF<sub>4</sub>/O<sub>2</sub> plasma passivationYejoo Choi, Hyeonjung Park, Changwoo Han, et al.
Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry|March 10, 2016
Observation of Single Pt Nanoparticle Collisions: Enhanced Electrocatalytic Activity on a Pd UltramicroelectrodeChanghwan Shin, Tae Eun Park, Changki Park, et al.
Chemistry, an Asian Journal|June 16, 2016
Direct Observation of the Collision of Single Pt Nanoparticles onto Single-Crystalline Gold Nanowire ElectrodesChanghwan Shin, Hyeonhu Bae, Mijeong Kang, et al.
ACS Applied Materials & Interfaces|March 10, 2026
Asymmetric Polarization in FE/AFE Bilayer HZO Memcapacitors via Composition-Induced Built-in BiasJunseok Kim, Huiseong Shin, Hyeonjung Park, et al.
Nanotechnology|February 1, 2023
Experimental study of endurance characteristics of Al-doped HfO<sub>2</sub>ferroelectric capacitorYejoo Choi, Jaemin Shin, Seungjun Moon, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 9, 2026
Low-Voltage and High-k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next-Generation Memory ApplicationsJunseok Kim, Hyeonjung Park, Changwoo Han, et al.
Pageof 5

Showing results (11-20 of 43) with videos related to

Sort By:
Pageof 5
Nano Convergence|February 6, 2018
Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistorsEunah Ko, Jaemin Shin, Changhwan Shin
Micromachines|September 23, 2022
Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAMMinjae Sun, Hyoung Won Baac, Changhwan Shin
Micromachines|May 28, 2020
Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Superlattice on Transparent ITO/Glass SubstrateYejoo Choi, Jaemin Shin, Seungjun Moon, et al.
Micromachines|September 23, 2022
Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm TechnologyChangwoo Noh, Changwoo Han, Sang Min Won, et al.
Scientific Reports|October 6, 2022
Improved remnant polarization of Zr-doped HfO<sub>2</sub> ferroelectric film by CF<sub>4</sub>/O<sub>2</sub> plasma passivationYejoo Choi, Hyeonjung Park, Changwoo Han, et al.
Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry|March 10, 2016
Observation of Single Pt Nanoparticle Collisions: Enhanced Electrocatalytic Activity on a Pd UltramicroelectrodeChanghwan Shin, Tae Eun Park, Changki Park, et al.
Chemistry, an Asian Journal|June 16, 2016
Direct Observation of the Collision of Single Pt Nanoparticles onto Single-Crystalline Gold Nanowire ElectrodesChanghwan Shin, Hyeonhu Bae, Mijeong Kang, et al.
ACS Applied Materials & Interfaces|March 10, 2026
Asymmetric Polarization in FE/AFE Bilayer HZO Memcapacitors via Composition-Induced Built-in BiasJunseok Kim, Huiseong Shin, Hyeonjung Park, et al.
Nanotechnology|February 1, 2023
Experimental study of endurance characteristics of Al-doped HfO<sub>2</sub>ferroelectric capacitorYejoo Choi, Jaemin Shin, Seungjun Moon, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 9, 2026
Low-Voltage and High-k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next-Generation Memory ApplicationsJunseok Kim, Hyeonjung Park, Changwoo Han, et al.
Pageof 5