Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Chee Hing Tan

Showing results (11-20 of 19) with videos related to

Pageof 2
Sort By:
You have reached the last page of results.This site can display upto 19 results.
Optics Express|November 24, 2011
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limitAndrew R J Marshall, Pin Jern Ker, Andrey Krysa, et al.
Optics Express|May 9, 2012
1300 nm wavelength InAs quantum dot photodetector grown on siliconIan Sandall, Jo Shien Ng, John P R David, et al.
Royal Society Open Science|June 3, 2017
Thin Al<sub>1-</sub> Ga <i></i> As<sub>0.56</sub>Sb<sub>0.44</sub> diodes with extremely weak temperature dependence of avalanche breakdownXinxin Zhou, Chee Hing Tan, Shiyong Zhang, et al.
Royal Society Open Science|April 13, 2016
InGaAs/InAlAs single photon avalanche diode for 1550 nm photonsXiao Meng, Shiyu Xie, Xinxin Zhou, et al.
Optics Express|February 7, 2018
Effects of carrier injection profile on low noise thin Al<sub>0.85</sub>Ga<sub>0.15</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> avalanche photodiodesLucas L G Pinel, Simon J Dimler, Xinxin Zhou, et al.
Optics Express|November 10, 2016
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth productShiyu Xie, Xinxin Zhou, Shiyong Zhang, et al.
Optics Express|March 10, 2018
Proton radiation effect on InAs avalanche photodiodesXinxin Zhou, Benjamin White, Xiao Meng, et al.
Optics Express|October 20, 2023
Very low excess noise Al<sub>0.75</sub>Ga<sub>0.25</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> avalanche photodiodeXiao Jin, Harry I J Lewis, Xin Yi, et al.
Scientific Reports|June 16, 2018
Demonstration of large ionization coefficient ratio in AlAs<sub>0.56</sub>Sb<sub>0.44</sub> lattice matched to InPXin Yi, Shiyu Xie, Baolai Liang, et al.
Pageof 2

Showing results (11-20 of 19) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 19 results.
Optics Express|November 24, 2011
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limitAndrew R J Marshall, Pin Jern Ker, Andrey Krysa, et al.
Optics Express|May 9, 2012
1300 nm wavelength InAs quantum dot photodetector grown on siliconIan Sandall, Jo Shien Ng, John P R David, et al.
Royal Society Open Science|June 3, 2017
Thin Al<sub>1-</sub> Ga <i></i> As<sub>0.56</sub>Sb<sub>0.44</sub> diodes with extremely weak temperature dependence of avalanche breakdownXinxin Zhou, Chee Hing Tan, Shiyong Zhang, et al.
Royal Society Open Science|April 13, 2016
InGaAs/InAlAs single photon avalanche diode for 1550 nm photonsXiao Meng, Shiyu Xie, Xinxin Zhou, et al.
Optics Express|February 7, 2018
Effects of carrier injection profile on low noise thin Al<sub>0.85</sub>Ga<sub>0.15</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> avalanche photodiodesLucas L G Pinel, Simon J Dimler, Xinxin Zhou, et al.
Optics Express|November 10, 2016
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth productShiyu Xie, Xinxin Zhou, Shiyong Zhang, et al.
Optics Express|March 10, 2018
Proton radiation effect on InAs avalanche photodiodesXinxin Zhou, Benjamin White, Xiao Meng, et al.
Optics Express|October 20, 2023
Very low excess noise Al<sub>0.75</sub>Ga<sub>0.25</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> avalanche photodiodeXiao Jin, Harry I J Lewis, Xin Yi, et al.
Scientific Reports|June 16, 2018
Demonstration of large ionization coefficient ratio in AlAs<sub>0.56</sub>Sb<sub>0.44</sub> lattice matched to InPXin Yi, Shiyu Xie, Baolai Liang, et al.
Pageof 2