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Advanced Materials (Deerfield Beach, Fla.)
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December 21, 2021
2D Materials-Based Static Random-Access Memory
Chang-Ju Liu, Yi Wan, Lain-Jong Li, et al.
Nature Communications
|
May 5, 2025
Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe<sub>2</sub> transistors
Hao-Yu Lan, Chih-Pin Lin, Lina Liu, et al.
ACS Nano
|
February 27, 2025
Monolayer WSe<sub>2</sub> Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation
Yuanqiu Tan, Shao-Heng Yang, Chih-Pin Lin, et al.
Nanoscale Horizons
|
October 26, 2022
Defect-engineered room temperature negative differential resistance in monolayer MoS<sub>2</sub> transistors
Wen-Hao Chang, Chun-I Lu, Tilo H Yang, et al.
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Search research articles
Search
Showing results (1-10 of 4) with videos related to
Sort By:
Page
of 1
Advanced Materials (Deerfield Beach, Fla.)
|
December 21, 2021
2D Materials-Based Static Random-Access Memory
Chang-Ju Liu, Yi Wan, Lain-Jong Li, et al.
Nature Communications
|
May 5, 2025
Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe<sub>2</sub> transistors
Hao-Yu Lan, Chih-Pin Lin, Lina Liu, et al.
ACS Nano
|
February 27, 2025
Monolayer WSe<sub>2</sub> Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation
Yuanqiu Tan, Shao-Heng Yang, Chih-Pin Lin, et al.
Nanoscale Horizons
|
October 26, 2022
Defect-engineered room temperature negative differential resistance in monolayer MoS<sub>2</sub> transistors
Wen-Hao Chang, Chun-I Lu, Tilo H Yang, et al.
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of 1