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Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors
Wen-Hao Chang1, Chun-I Lu1, Tilo H Yang1
1Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan. ywlan@ntnu.edu.tw.
Nanoscale Horizons
|October 26, 2022
Summary
Defect engineering in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) enables negative differential resistance (NDR). This study demonstrates controlled sulfur vacancies to achieve stable room-temperature NDR in MoS2 FETs.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Negative differential resistance (NDR) is crucial for advanced electronic devices.
- Two-dimensional (2D) transition metal dichalcogenide (TMD) field-effect transistors (FETs) show potential for NDR.
- Sulfur (S) vacancy defects are theoretically predicted to enhance NDR in monolayer MoS2.
Purpose of the Study:
- To engineer monolayer MoS2 FETs with controlled sulfur vacancies.
- To investigate the correlation between S-vacancies and electron transport characteristics.
- To observe and characterize NDR in defect-engineered MoS2 FETs.
Main Methods:
- Fabrication of monolayer MoS2 FETs using chemical (KOH), physical (electron beam), and as-grown methods.
- Controlled introduction of S-vacancy defects (Vs) to approximately 5 ± 0.5%.
- Systematic studies involving electron transport measurements and spectroscopic analysis.
Main Results:
- NDR effect clearly observed in defect-engineered monolayer MoS2 FETs.
- Stable NDR achieved at room temperature.
- Peak-to-valley ratio of NDR modulated by gate electric field and light intensity.
Conclusions:
- Controlled S-vacancy engineering is an effective strategy to achieve NDR in monolayer MoS2 FETs.
- Defect-engineered MoS2 FETs offer stable room-temperature NDR with tunable characteristics.
- This work paves the way for novel electronic applications using defect-engineered layered TMDs.
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