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Scientific Reports|November 18, 2021
A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistorsWalid Amir, Ju-Won Shin, Ki-Yong Shin, et al.
Nanotechnology|April 7, 2010
Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodesGunho Jo, Minhyeok Choe, Chu-Young Cho, et al.
Materials (Basel, Switzerland)|December 11, 2022
Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal ConductivitySurajit Chakraborty, Walid Amir, Ju-Won Shin, et al.
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