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ACS Nano
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June 17, 2024
Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se<sub></sub>Te<sub>1-</sub> Nanosheets for p-Type Transistors and Inverters
Haoxin Huang, Jiajia Zha, Songcen Xu, et al.
Nature Communications
|
October 19, 2024
High drain field impact ionization transistors as ideal switches
Baowei Yuan, Zhibo Chen, Yingxin Chen, et al.
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Showing results (31-40 of 32) with videos related to
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This site can display upto 32 results.
ACS Nano
|
June 17, 2024
Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se<sub></sub>Te<sub>1-</sub> Nanosheets for p-Type Transistors and Inverters
Haoxin Huang, Jiajia Zha, Songcen Xu, et al.
Nature Communications
|
October 19, 2024
High drain field impact ionization transistors as ideal switches
Baowei Yuan, Zhibo Chen, Yingxin Chen, et al.
Page
of 4