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Nanoscale|April 5, 2018
Non-destructive characterization of extended crystalline defects in confined semiconductor device structuresAndreas Schulze, Libor Strakos, Tomas Vystavel, et al.Scientific Reports|October 22, 2022
Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometryNiels Claessens, Zamran Zahoor Khan, Negin Rahnemai Haghighi, et al.Nanoscale|October 2, 2013
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devicesUmberto Celano, Ludovic Goux, Karl Opsomer, et al.Nano Letters|November 3, 2015
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching MemoryUmberto Celano, Ludovic Goux, Robin Degraeve, et al.Nanotechnology|July 15, 2020
Unravelling stacking order in epitaxial bilayer MX2 using 4D-STEM with unsupervised learningAnkit Nalin Mehta, Nicolas Gauquelin, Magnus Nord, et al.Ultramicroscopy|March 19, 2013
Atomic insight into Ge₁₋xSnx using atom probe tomographyArul Kumar, Manu P Komalan, Haraprasanna Lenka, et al.Materials (Basel, Switzerland)|August 10, 2017
Characterization of High-k Nanolayers by Grazing Incidence X-ray SpectrometryMatthias Müller, Philipp Hönicke, Blanka Detlefs, et al.ACS Applied Materials & Interfaces|March 8, 2017
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change MemoryUmberto Celano, Jonathan Op de Beeck, Sergiu Clima, et al.Journal of the American Chemical Society|April 8, 2011
Structure, chemical composition, and reactivity correlations during the in situ oxidation of 2-propanolKristof Paredis, Luis K Ono, Simon Mostafa, et al.Ultramicroscopy|January 4, 2020
Enhancing the defect contrast in ECCI through angular filtering of BSEsHan Han, Thomas Hantschel, Andreas Schulze, et al.Pageof 5