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ACS Nano|April 24, 2012
Multilevel resistive switching in planar graphene/SiO2 nanogap structuresCongli He, Zhiwen Shi, Lianchang Zhang, et al.Nanotechnology|October 23, 2015
Nanographene charge trapping memory with a large memory windowJianling Meng, Rong Yang, Jing Zhao, et al.Nanotechnology|May 27, 2011
Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filamentsFei Zhuge, Shanshan Peng, Congli He, et al.Nano Letters|April 6, 2016
Versatile Fabrication of Self-Aligned Nanoscale Hall Devices Using Nanowire MasksJianshi Tang, Guoqiang Yu, Chiu-Yen Wang, et al.Physical Review Letters|May 15, 2018
Interfacial Dzyaloshinskii-Moriya Interaction: Effect of 5d Band Filling and Correlation with Spin Mixing ConductanceXin Ma, Guoqiang Yu, Chi Tang, et al.Nanotechnology|September 23, 2010
Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwichesMi Li, Fei Zhuge, Xiaojian Zhu, et al.ACS Nano|February 7, 2015
Tunable piezoresistivity of nanographene films for strain sensingJing Zhao, Guole Wang, Rong Yang, et al.Small (Weinheim an Der Bergstrasse, Germany)|March 2, 2012
Growth, characterization, and properties of nanographeneWei Yang, Congli He, Lianchang Zhang, et al.Nanotechnology|July 4, 2012
Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layerDonghua Liu, Zhiwen Shi, Lianchang Zhang, et al.Nano Letters|December 15, 2016
Room-Temperature Skyrmion Shift Device for Memory ApplicationGuoqiang Yu, Pramey Upadhyaya, Qiming Shao, et al.Pageof 3