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ACS Applied Materials & Interfaces
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May 4, 2022
Nonequilibrium Phonon Thermal Resistance at MoS<sub>2</sub>/Oxide and Graphene/Oxide Interfaces
Weidong Zheng, Connor J McClellan, Eric Pop, et al.
ACS Nano
|
January 6, 2021
High Current Density in Monolayer MoS<sub>2</sub> Doped by AlO<sub></sub>
Connor J McClellan, Eilam Yalon, Kirby K H Smithe, et al.
Nano Letters
|
May 4, 2023
Ambipolar Thickness-Dependent Thermoelectric Measurements of WSe<sub>2</sub>
Victoria Chen, Hye Ryoung Lee, Çağıl Köroğlu, et al.
Nano Letters
|
May 25, 2017
Rapid Flame Synthesis of Atomically Thin MoO<sub>3</sub> down to Monolayer Thickness for Effective Hole Doping of WSe<sub>2</sub>
Lili Cai, Connor J McClellan, Ai Leen Koh, et al.
Nano Letters
|
January 3, 2019
Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe<sub>2</sub> Transistors
Elyse Barré, Jean Anne C Incorvia, Suk Hyun Kim, et al.
Nano Letters
|
April 6, 2018
Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts
Ching-Hua Wang, Jean Anne C Incorvia, Connor J McClellan, et al.
ACS Nano
|
May 4, 2021
Ultrathin Three-Monolayer Tunneling Memory Selectors
Ching-Hua Wang, Victoria Chen, Connor J McClellan, et al.
Nature Communications
|
September 29, 2019
Publisher Correction: An electrochemical thermal transistor
Aditya Sood, Feng Xiong, Shunda Chen, et al.
Nature Communications
|
October 31, 2018
An electrochemical thermal transistor
Aditya Sood, Feng Xiong, Shunda Chen, et al.
Nano Letters
|
August 22, 2019
Fast Spiking of a Mott VO<sub>2</sub>-Carbon Nanotube Composite Device
Stephanie M Bohaichuk, Suhas Kumar, Greg Pitner, et al.
Page
of 2
Search research articles
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Showing results (1-10 of 17) with videos related to
Sort By:
Page
of 2
ACS Applied Materials & Interfaces
|
May 4, 2022
Nonequilibrium Phonon Thermal Resistance at MoS<sub>2</sub>/Oxide and Graphene/Oxide Interfaces
Weidong Zheng, Connor J McClellan, Eric Pop, et al.
ACS Nano
|
January 6, 2021
High Current Density in Monolayer MoS<sub>2</sub> Doped by AlO<sub></sub>
Connor J McClellan, Eilam Yalon, Kirby K H Smithe, et al.
Nano Letters
|
May 4, 2023
Ambipolar Thickness-Dependent Thermoelectric Measurements of WSe<sub>2</sub>
Victoria Chen, Hye Ryoung Lee, Çağıl Köroğlu, et al.
Nano Letters
|
May 25, 2017
Rapid Flame Synthesis of Atomically Thin MoO<sub>3</sub> down to Monolayer Thickness for Effective Hole Doping of WSe<sub>2</sub>
Lili Cai, Connor J McClellan, Ai Leen Koh, et al.
Nano Letters
|
January 3, 2019
Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe<sub>2</sub> Transistors
Elyse Barré, Jean Anne C Incorvia, Suk Hyun Kim, et al.
Nano Letters
|
April 6, 2018
Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts
Ching-Hua Wang, Jean Anne C Incorvia, Connor J McClellan, et al.
ACS Nano
|
May 4, 2021
Ultrathin Three-Monolayer Tunneling Memory Selectors
Ching-Hua Wang, Victoria Chen, Connor J McClellan, et al.
Nature Communications
|
September 29, 2019
Publisher Correction: An electrochemical thermal transistor
Aditya Sood, Feng Xiong, Shunda Chen, et al.
Nature Communications
|
October 31, 2018
An electrochemical thermal transistor
Aditya Sood, Feng Xiong, Shunda Chen, et al.
Nano Letters
|
August 22, 2019
Fast Spiking of a Mott VO<sub>2</sub>-Carbon Nanotube Composite Device
Stephanie M Bohaichuk, Suhas Kumar, Greg Pitner, et al.
Page
of 2