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Dae Eun Kwon

Showing results (1-10 of 8) with videos related to

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Nanoscale|December 25, 2013
Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxidesKyung Jean Yoon, Seul Ji Song, Jun Yeong Seok, et al.
Nanoscale|August 9, 2017
The current limit and self-rectification functionalities in the TiO<sub>2</sub>/HfO<sub>2</sub> resistive switching material systemJung Ho Yoon, Dae Eun Kwon, Yumin Kim, et al.
ACS Applied Materials & Interfaces|June 8, 2018
Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching MemoryTae Hyung Park, Young Jae Kwon, Hae Jin Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 15, 2015
Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flashJung Ho Yoon, Kyung Min Kim, Seul Ji Song, et al.
ACS Applied Materials & Interfaces|June 28, 2016
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell AreaJung Ho Yoon, Sijung Yoo, Seul Ji Song, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 11, 2018
Nociceptive MemristorYumin Kim, Young Jae Kwon, Dae Eun Kwon, et al.
ACS Applied Materials & Interfaces|December 13, 2016
Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>3</sub>, Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>2</sub>Cp, and H<sub>2</sub>OSeul Ji Song, Taehyung Park, Kyung Jean Yoon, et al.
Nanoscale|September 8, 2016
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memoryXing Long Shao, Kyung Min Kim, Kyung Jean Yoon, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Nanoscale|December 25, 2013
Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxidesKyung Jean Yoon, Seul Ji Song, Jun Yeong Seok, et al.
Nanoscale|August 9, 2017
The current limit and self-rectification functionalities in the TiO<sub>2</sub>/HfO<sub>2</sub> resistive switching material systemJung Ho Yoon, Dae Eun Kwon, Yumin Kim, et al.
ACS Applied Materials & Interfaces|June 8, 2018
Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching MemoryTae Hyung Park, Young Jae Kwon, Hae Jin Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 15, 2015
Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flashJung Ho Yoon, Kyung Min Kim, Seul Ji Song, et al.
ACS Applied Materials & Interfaces|June 28, 2016
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell AreaJung Ho Yoon, Sijung Yoo, Seul Ji Song, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 11, 2018
Nociceptive MemristorYumin Kim, Young Jae Kwon, Dae Eun Kwon, et al.
ACS Applied Materials & Interfaces|December 13, 2016
Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>3</sub>, Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>2</sub>Cp, and H<sub>2</sub>OSeul Ji Song, Taehyung Park, Kyung Jean Yoon, et al.
Nanoscale|September 8, 2016
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memoryXing Long Shao, Kyung Min Kim, Kyung Jean Yoon, et al.
Pageof 1