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Chemical Reviews
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May 2, 2025
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing
Daniele Ielmini, Giacomo Pedretti
Nanotechnology
|
November 8, 2019
Emerging neuromorphic devices
Daniele Ielmini, Stefano Ambrogio
Chemical Reviews
|
September 1, 2009
Phase change materials and their application to nonvolatile memories
Simone Raoux, Wojciech Wełnic, Daniele Ielmini
Nature Communications
|
April 1, 2024
Memristive tonotopic mapping with volatile resistive switching memory devices
Alessandro Milozzi, Saverio Ricci, Daniele Ielmini
Frontiers in Neuroscience
|
May 20, 2020
Bio-Inspired Techniques in a Fully Digital Approach for Lifelong Learning
Stefano Bianchi, Irene Muñoz-Martin, Daniele Ielmini
Faraday Discussions
|
October 27, 2018
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
Elia Ambrosi, Alessandro Bricalli, Mario Laudato, et al.
Npj Unconventional Computing
|
January 12, 2026
Achieving high precision in analog in-memory computing systems
Piergiulio Mannocci, Giacomo Larelli, Marco Bonomi, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
March 27, 2014
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
Stefano Ambrogio, Simone Balatti, Seol Choi, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
August 7, 2018
Logic Computing with Stateful Neural Networks of Resistive Switches
Zhong Sun, Elia Ambrosi, Alessandro Bricalli, et al.
Science Advances
|
February 18, 2020
One-step regression and classification with cross-point resistive memory arrays
Zhong Sun, Giacomo Pedretti, Alessandro Bricalli, et al.
Page
of 5
Search research articles
Search
Showing results (1-10 of 44) with videos related to
Sort By:
Page
of 5
Chemical Reviews
|
May 2, 2025
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing
Daniele Ielmini, Giacomo Pedretti
Nanotechnology
|
November 8, 2019
Emerging neuromorphic devices
Daniele Ielmini, Stefano Ambrogio
Chemical Reviews
|
September 1, 2009
Phase change materials and their application to nonvolatile memories
Simone Raoux, Wojciech Wełnic, Daniele Ielmini
Nature Communications
|
April 1, 2024
Memristive tonotopic mapping with volatile resistive switching memory devices
Alessandro Milozzi, Saverio Ricci, Daniele Ielmini
Frontiers in Neuroscience
|
May 20, 2020
Bio-Inspired Techniques in a Fully Digital Approach for Lifelong Learning
Stefano Bianchi, Irene Muñoz-Martin, Daniele Ielmini
Faraday Discussions
|
October 27, 2018
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
Elia Ambrosi, Alessandro Bricalli, Mario Laudato, et al.
Npj Unconventional Computing
|
January 12, 2026
Achieving high precision in analog in-memory computing systems
Piergiulio Mannocci, Giacomo Larelli, Marco Bonomi, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
March 27, 2014
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
Stefano Ambrogio, Simone Balatti, Seol Choi, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
August 7, 2018
Logic Computing with Stateful Neural Networks of Resistive Switches
Zhong Sun, Elia Ambrosi, Alessandro Bricalli, et al.
Science Advances
|
February 18, 2020
One-step regression and classification with cross-point resistive memory arrays
Zhong Sun, Giacomo Pedretti, Alessandro Bricalli, et al.
Page
of 5