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David R Bowler

Showing results (21-30 of 35) with videos related to

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Journal of Chemical Theory and Computation|July 18, 2017
Efficient Calculation of Electronic Structure Using O(N) Density Functional TheoryAyako Nakata, Yasunori Futamura, Tetsuya Sakurai, et al.
Journal of Chemical Theory and Computation|November 27, 2015
Non-self-consistent Density-Functional Theory Exchange-Correlation Forces for GGA FunctionalsAntonio S Torralba, David R Bowler, Tsuyoshi Miyazaki, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 5, 2018
Structural properties of silicon-germanium and germanium-silicon core-shell nanowiresConn O'Rourke, Shereif Y Mujahed, Chathurangi Kumarasinghe, et al.
Journal of Computational Chemistry|June 27, 2020
Blue moon ensemble simulation of aquation free energy profiles applied to mono and bifunctional platinum anticancer drugsTeruo Hirakawa, David R Bowler, Tsuyoshi Miyazaki, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 24, 2018
High-accuracy large-scale DFT calculations using localized orbitals in complex electronic systems: the case of graphene-metal interfacesCarlos Romero-Muñiz, Ayako Nakata, Pablo Pou, et al.
ACS Nano|April 2, 2013
Scalable patterning of one-dimensional dangling bond rows on hydrogenated Si(001)François Bianco, David R Bowler, James H G Owen, et al.
ACS Nano|November 29, 2012
Site-dependent ambipolar charge states induced by group V atoms in a silicon surfacePhilipp Studer, Veronika Brázdová, Steven R Schofield, et al.
The Journal of Physical Chemistry Letters|August 20, 2015
Protonated Carboxyl Anchor for Stable Adsorption of Ru N749 Dye (Black Dye) on a TiO2 Anatase (101) SurfaceKeitaro Sodeyama, Masato Sumita, Conn O'Rourke, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 21, 2024
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice FabricationTaylor J Z Stock, Oliver Warschkow, Procopios C Constantinou, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 6, 2013
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopyKitiphat Sinthiptharakoon, Steven R Schofield, Philipp Studer, et al.
Pageof 4

Showing results (21-30 of 35) with videos related to

Sort By:
Pageof 4
Journal of Chemical Theory and Computation|July 18, 2017
Efficient Calculation of Electronic Structure Using O(N) Density Functional TheoryAyako Nakata, Yasunori Futamura, Tetsuya Sakurai, et al.
Journal of Chemical Theory and Computation|November 27, 2015
Non-self-consistent Density-Functional Theory Exchange-Correlation Forces for GGA FunctionalsAntonio S Torralba, David R Bowler, Tsuyoshi Miyazaki, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 5, 2018
Structural properties of silicon-germanium and germanium-silicon core-shell nanowiresConn O'Rourke, Shereif Y Mujahed, Chathurangi Kumarasinghe, et al.
Journal of Computational Chemistry|June 27, 2020
Blue moon ensemble simulation of aquation free energy profiles applied to mono and bifunctional platinum anticancer drugsTeruo Hirakawa, David R Bowler, Tsuyoshi Miyazaki, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 24, 2018
High-accuracy large-scale DFT calculations using localized orbitals in complex electronic systems: the case of graphene-metal interfacesCarlos Romero-Muñiz, Ayako Nakata, Pablo Pou, et al.
ACS Nano|April 2, 2013
Scalable patterning of one-dimensional dangling bond rows on hydrogenated Si(001)François Bianco, David R Bowler, James H G Owen, et al.
ACS Nano|November 29, 2012
Site-dependent ambipolar charge states induced by group V atoms in a silicon surfacePhilipp Studer, Veronika Brázdová, Steven R Schofield, et al.
The Journal of Physical Chemistry Letters|August 20, 2015
Protonated Carboxyl Anchor for Stable Adsorption of Ru N749 Dye (Black Dye) on a TiO2 Anatase (101) SurfaceKeitaro Sodeyama, Masato Sumita, Conn O'Rourke, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 21, 2024
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice FabricationTaylor J Z Stock, Oliver Warschkow, Procopios C Constantinou, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 6, 2013
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopyKitiphat Sinthiptharakoon, Steven R Schofield, Philipp Studer, et al.
Pageof 4