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Scientific Reports|October 21, 2014
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devicesDemetrio Logoteta, Gianluca Fiori, Giuseppe IannacconeScientific Reports|September 30, 2015
Vertical transport in graphene-hexagonal boron nitride heterostructure devicesSamantha Bruzzone, Demetrio Logoteta, Gianluca Fiori, et al.Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|July 15, 2014
High-performance solution of the transport problem in a graphene armchair structure with a generic potentialDemetrio Logoteta, Paolo Marconcini, Claudio Bonati, et al.Materials (Basel, Switzerland)|December 28, 2019
Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect TransistorsYouseung Lee, Demetrio Logoteta, Nicolas Cavassilas, et al.Advanced Materials (Deerfield Beach, Fla.)|January 16, 2023
Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVDZhenyu Wang, Mukesh Tripathi, Zahra Golsanamlou, et al.Small (Weinheim an Der Bergstrasse, Germany)|November 3, 2025
Tuning Ultra-Narrow Direct Bandgap in α-Sn Nanocrystals: A CMOS-Compatible Approach for THz ApplicationsTiziano Bertoli, Elena Stellino, Francesco Minati, et al.Pageof 1