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Dong-Hyeok Lim

Showing results (1-10 of 8) with videos related to

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Scientific Reports|May 19, 2022
Controlling resistive switching behavior in the solution processed SiO<sub>2-x</sub> device by the insertion of TiO<sub>2</sub> nanoparticlesSera Kwon, Min-Jung Kim, Dong-Hyeok Lim, et al.
Nature Communications|January 13, 2021
Spontaneous sparse learning for PCM-based memristor neural networksDong-Hyeok Lim, Shuang Wu, Rong Zhao, et al.
Scientific Reports|October 23, 2015
Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiNDong-Hyeok Lim, Ga-Yeon Kim, Jin-Ho Song, et al.
Small Methods|November 5, 2024
Ultralow-Power Programmable 3D Vertical Phase-Change Memory with Heater-All-Around ConfigurationNamwook Hur, Yechan Kim, Beomsung Park, et al.
ACS Nano|April 13, 2023
Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic OperationsHoyeon Cho, Donghyun Lee, Kyungmin Ko, et al.
ACS Applied Materials & Interfaces|September 27, 2022
Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic HardwareMinjae Kim, Malik Abdul Rehman, Donghyun Lee, et al.
ACS Applied Materials & Interfaces|August 16, 2017
Characterization of Rotational Stacking Layers in Large-Area MoSe<sub>2</sub> Film Grown by Molecular Beam Epitaxy and Interaction with PhotonYoon-Ho Choi, Dong-Hyeok Lim, Jae-Hun Jeong, et al.
ACS Nano|December 26, 2024
Competition between Bipolar Conduction Modes in Extrinsically <i>p</i>-Doped MoS<sub>2</sub>: Interaction with Gate Dielectric MattersKyungmin Ko, Jing Huang, Jaeeun Kwon, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Scientific Reports|May 19, 2022
Controlling resistive switching behavior in the solution processed SiO<sub>2-x</sub> device by the insertion of TiO<sub>2</sub> nanoparticlesSera Kwon, Min-Jung Kim, Dong-Hyeok Lim, et al.
Nature Communications|January 13, 2021
Spontaneous sparse learning for PCM-based memristor neural networksDong-Hyeok Lim, Shuang Wu, Rong Zhao, et al.
Scientific Reports|October 23, 2015
Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiNDong-Hyeok Lim, Ga-Yeon Kim, Jin-Ho Song, et al.
Small Methods|November 5, 2024
Ultralow-Power Programmable 3D Vertical Phase-Change Memory with Heater-All-Around ConfigurationNamwook Hur, Yechan Kim, Beomsung Park, et al.
ACS Nano|April 13, 2023
Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic OperationsHoyeon Cho, Donghyun Lee, Kyungmin Ko, et al.
ACS Applied Materials & Interfaces|September 27, 2022
Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic HardwareMinjae Kim, Malik Abdul Rehman, Donghyun Lee, et al.
ACS Applied Materials & Interfaces|August 16, 2017
Characterization of Rotational Stacking Layers in Large-Area MoSe<sub>2</sub> Film Grown by Molecular Beam Epitaxy and Interaction with PhotonYoon-Ho Choi, Dong-Hyeok Lim, Jae-Hun Jeong, et al.
ACS Nano|December 26, 2024
Competition between Bipolar Conduction Modes in Extrinsically <i>p</i>-Doped MoS<sub>2</sub>: Interaction with Gate Dielectric MattersKyungmin Ko, Jing Huang, Jaeeun Kwon, et al.
Pageof 1