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Elizabeth H Edwards

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Optics Express|February 8, 2013
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on siliconElizabeth H Edwards, Leon Lever, Edward T Fei, et al.
Optics Express|February 8, 2013
Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulatorsElizabeth H Edwards, Ross M Audet, Edward T Fei, et al.
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Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Optics Express|February 8, 2013
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on siliconElizabeth H Edwards, Leon Lever, Edward T Fei, et al.
Optics Express|February 8, 2013
Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulatorsElizabeth H Edwards, Ross M Audet, Edward T Fei, et al.
Pageof 1