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Emanuel Ber

Showing results (1-10 of 5) with videos related to

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The Journal of Chemical Physics|September 11, 2023
Spontaneous Raman scattering from vibrational polaritons is obscured by reservoir statesBar Cohn, Tikhon Filippov, Emanuel Ber, et al.
Nano Letters|November 17, 2025
Low-Power Ionically Tunable Bilayer MoS<sub>2</sub> Synaptic TransistorsOr Levit, Emanuel Ber, Yair Keller, et al.
ACS Applied Materials & Interfaces|July 18, 2020
Improved Current Density and Contact Resistance in Bilayer MoSe<sub>2</sub> Field Effect Transistors by AlO<sub></sub> CappingDivya Somvanshi, Emanuel Ber, Connor S Bailey, et al.
Small Methods|July 23, 2025
Interfacial Engineering of Degenerately Doped V<sub>0.25</sub>Mo<sub>0.75</sub>S<sub>2</sub> for Improved Contacts in MoS<sub>2</sub> Field Effect TransistorsDipak Maity, Rajesh Kumar Yadav, Adi Levi, et al.
ACS Nano|March 8, 2024
Drift of Schottky Barrier Height in Phase Change MaterialsRivka-Galya Nir-Harwood, Guy Cohen, Amlan Majumdar, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
The Journal of Chemical Physics|September 11, 2023
Spontaneous Raman scattering from vibrational polaritons is obscured by reservoir statesBar Cohn, Tikhon Filippov, Emanuel Ber, et al.
Nano Letters|November 17, 2025
Low-Power Ionically Tunable Bilayer MoS<sub>2</sub> Synaptic TransistorsOr Levit, Emanuel Ber, Yair Keller, et al.
ACS Applied Materials & Interfaces|July 18, 2020
Improved Current Density and Contact Resistance in Bilayer MoSe<sub>2</sub> Field Effect Transistors by AlO<sub></sub> CappingDivya Somvanshi, Emanuel Ber, Connor S Bailey, et al.
Small Methods|July 23, 2025
Interfacial Engineering of Degenerately Doped V<sub>0.25</sub>Mo<sub>0.75</sub>S<sub>2</sub> for Improved Contacts in MoS<sub>2</sub> Field Effect TransistorsDipak Maity, Rajesh Kumar Yadav, Adi Levi, et al.
ACS Nano|March 8, 2024
Drift of Schottky Barrier Height in Phase Change MaterialsRivka-Galya Nir-Harwood, Guy Cohen, Amlan Majumdar, et al.
Pageof 1