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Enxiu Wu

Showing results (11-20 of 25) with videos related to

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Science Advances|May 7, 2019
Dynamically controllable polarity modulation of MoTe<sub>2</sub> field-effect transistors through ultraviolet light and electrostatic activationEnxiu Wu, Yuan Xie, Jing Zhang, et al.
Nano Letters|September 13, 2024
Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe<sub>2</sub>/2H-MoS<sub>2</sub> HeterostructureShida Huo, Hengze Qu, Fanying Meng, et al.
Materials Horizons|July 11, 2023
Flexible In-Ga-Zn-N-O synaptic transistors for ultralow-power neuromorphic computing and EEG-based brain-computer interfacesShuangqing Fan, Enxiu Wu, Minghui Cao, et al.
Nanotechnology|February 28, 2018
Volatile organic compounds discrimination based on dual mode detectionYuanyuan Yu, Enxiu Wu, Yan Chen, et al.
Nanoscale|April 21, 2021
Modulation of MoTe<sub>2</sub>/MoS<sub>2</sub> van der Waals heterojunctions for multifunctional devices using N<sub>2</sub>O plasma with an opposite doping effectYuan Xie, Enxiu Wu, Shuangqing Fan, et al.
ACS Nano|October 3, 2025
W-Shaped Antiambipolar Transistors Based on h-BN/MoTe<sub>2</sub>/BP HeterostructuresEnxiu Wu, Yuexuan Ma, Qijia Tian, et al.
Nanotechnology|January 10, 2022
Dielectric engineering enable to lateral anti-ambipolar MoTe<sub></sub>heterojunctionGuangyu Geng, Enxiu Wu, Linyan Xu, et al.
ACS Applied Materials & Interfaces|September 25, 2018
Specific and Highly Sensitive Detection of Ketone Compounds Based on p-Type MoTe<sub>2</sub> under Ultraviolet IlluminationEnxiu Wu, Yuan Xie, Bo Yuan, et al.
Nanotechnology|February 16, 2018
The effect of air stable n-doping through mild plasma on the mechanical property of WSe<sub>2</sub> layersLinyan Xu, Shuangbei Qian, Yuan Xie, et al.
Nanotechnology|August 10, 2018
Highly-sensitive gas sensor based on two-dimensional material field effect transistorSigang Shi, Ruixue Hu, Enxiu Wu, et al.
Pageof 3

Showing results (11-20 of 25) with videos related to

Sort By:
Pageof 3
Science Advances|May 7, 2019
Dynamically controllable polarity modulation of MoTe<sub>2</sub> field-effect transistors through ultraviolet light and electrostatic activationEnxiu Wu, Yuan Xie, Jing Zhang, et al.
Nano Letters|September 13, 2024
Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe<sub>2</sub>/2H-MoS<sub>2</sub> HeterostructureShida Huo, Hengze Qu, Fanying Meng, et al.
Materials Horizons|July 11, 2023
Flexible In-Ga-Zn-N-O synaptic transistors for ultralow-power neuromorphic computing and EEG-based brain-computer interfacesShuangqing Fan, Enxiu Wu, Minghui Cao, et al.
Nanotechnology|February 28, 2018
Volatile organic compounds discrimination based on dual mode detectionYuanyuan Yu, Enxiu Wu, Yan Chen, et al.
Nanoscale|April 21, 2021
Modulation of MoTe<sub>2</sub>/MoS<sub>2</sub> van der Waals heterojunctions for multifunctional devices using N<sub>2</sub>O plasma with an opposite doping effectYuan Xie, Enxiu Wu, Shuangqing Fan, et al.
ACS Nano|October 3, 2025
W-Shaped Antiambipolar Transistors Based on h-BN/MoTe<sub>2</sub>/BP HeterostructuresEnxiu Wu, Yuexuan Ma, Qijia Tian, et al.
Nanotechnology|January 10, 2022
Dielectric engineering enable to lateral anti-ambipolar MoTe<sub></sub>heterojunctionGuangyu Geng, Enxiu Wu, Linyan Xu, et al.
ACS Applied Materials & Interfaces|September 25, 2018
Specific and Highly Sensitive Detection of Ketone Compounds Based on p-Type MoTe<sub>2</sub> under Ultraviolet IlluminationEnxiu Wu, Yuan Xie, Bo Yuan, et al.
Nanotechnology|February 16, 2018
The effect of air stable n-doping through mild plasma on the mechanical property of WSe<sub>2</sub> layersLinyan Xu, Shuangbei Qian, Yuan Xie, et al.
Nanotechnology|August 10, 2018
Highly-sensitive gas sensor based on two-dimensional material field effect transistorSigang Shi, Ruixue Hu, Enxiu Wu, et al.
Pageof 3